Dr. Chandrasekar P

Dr. Chandrasekar P

Ph. D

Associate Professor

Electronics and Communication Engineering
AICTE ID: 1-3774311165

Biography

I earned my B.E. (ECE) in 2007, and after that, I worked as an Embedded Programmer for approximately 1.5 years at IWIZ Hitech Solution in Chennai, where I also practiced Microcontroller Programming using Embedded C and LabVIEW design on my own. I have 10 years of teaching experience in various of institutions. I finished my Masters (Embedded System Technologies) in Anna University, Regional Center- Coimbatore. I completed Full TIme Ph.D in 2024 at SRM Institute of Science and Technology(Deemed to be University), kattankulathur.

Academic Credentials

Swipe to see more
Degree Specialization Institute University Year of Passing
Ph.D. Thin film Solar cell SRM Institute of Science and Technology SRM Institute of Science and Technology 2024
M.E. Embedded System Technologies Anna University Regional Campus Coimbatore Anna University 2013
B.E. Electronics and communication Engineering Shri Angalamman college of engineering and technology Anna University 2007

Academic & Professional Experience

Swipe to see more
Experience / Role Type Organization Duration Total
Associate Professor Teaching Kangeyam Institute of Technology Jun 2025 - Present 1 Year 3 Months
Assistant Professor Teaching Parul University, Vadodara, Gujarat May 2024 - Apr 2025 1 Year
Assistant Professor Teaching ICFAI Foundation for Higher Education, Hyderabad May 2015 - Aug 2020 5 Years 4 Months
Assistant Professor Teaching EBET Group Of Institutions(currently named as Kangeyam Institute of Technology) Jun 2013 - May 2015 2 Years
Lecturer Teaching SASURIE college of Engineering Jun 2009 - Jul 2011 2 Years 2 Months
Embedded Programmer Industry IWIZ HITECH solutions, Chennai Jan 2008 - May 2009 1 Year 5 Months

Areas of Expertise

Thin film solar cell Semiconductor device modelling

Institutional Roles

HEC coordinator

Departmental Roles

BoS coordinator Mentor III year NBA department coordinator

Journal Publications

  1. SCI/SCIE Indexed Journals
  2. S. R. Mohanty, S. Sahoo, C. Palanisamy, and S. Routray, ‘Influence of defects distribution and quantum confinement on the optoelectronic performance of CZTSe-based light-sensing devices’, Micro and Nanostructures, vol. 216, p. 208768, 2026.(SCI-E, IF: 3, Q2) https://doi.org/10.1016/j.micrna.2026.208768
  3. P. Chandrasekar, M. Courel, and S. Rouray, ‘Accurate prediction of JV parameters in CZT(S,Se) quantum confined photon-sensitive devices: an AI based efficient photon energy management’, Physica Scripta, vol. 100, no. 7, p. 076027, Jul. 2025(SCI-E, IF: 2.6,Q2). doi: 10.1088/1402-4896/aded4c
  4. S. R. Mohanty, C. Palanisamy, S. Sahoo, and S. Routray, “Nanostructured Quadric‐Confined Quantum Dot–Quantum Well kesterite Solar Cell: a pathway for Cost‐Effective Photosensitive devices,” Physica Status Solidi (A), Apr. 2025, (SCI-E, IF: 1.9, Q2) doi: 10.1002/pssa.202400849.
  5. S. R. Mohanty, C. Palanisamy, S. Sahoo, and S. Routray, ‘Stride potential of CZGS/CZGSe quantum dot solar cell influence of nano-structured all-around-barriers’, Micro and Nanostructures, vol. 200, p. 208083, 2025.(SCI-E, IF: 2.7, Q2) https://doi.org/10.1016/j.micrna.2025.208083
  6. K. G. Rodriguez-Osorio, J. A. A. Arvizu, I. M. De Los Santos, J. P. M. Lazaro, M. O. M, F. J. S. Rodríguez, L. A. A. S. Hernandez, L. M. Pérez, D. Laroze, P. Chandrasekar, S. Routray, and M. C. Piedrahita,“Experimental and theoretical advances in Cu2ZnSn(S,Se)4 solar cells”, Journal of Physics D: Applied Physics, vol. 58, no. 13, p. 133001, Jan. 2025.(SCI-E, IF: 3.1, Q1) https://doi.org/10.1088/1361-6463/adab7f
  7. S. R. Mohanty, C. Palanisamy, S. Sahoo, and S. Rouray, “Unlocking the Potential of Kesterite Solar Cells: Quantum Confinement Structures to Pave the Way for High‐Performance Photovoltaic Technologies,” Physica Status Solidi (A), Aug. 2024, (SCI-E, IF: 1.9, Q2) doi: 10.1002/pssa.202400341. 
  8. K. Thangavel, P. Aruchamy, P. Joghee, and C. Palanisamy, “Investigating the Performance Optimization of Three‐Quantum‐Well High Electron Mobility Transistor Device: Analyzing Operational Characteristics and Gate Voltage Influence,” Physica Status Solidi (A), Oct. 2024, (SCI-E, IF: 1.9, Q2) doi: 10.1002/pssa.202400448. 
  9. P. Chandrasekar, S. Routray, S. K. Palaniswamy, and Y. Massoud, “Environmentally Benign Nanostructured Kesterite Binate Quantum Dot Well (BQDW) Solar Cell: A Proposal Towards High Efficiency,” IEEE Transactions on Nanotechnology, vol. 22, pp. 473–480, 2023.(SCI-E, IF: 2.4, Q2) doi:10.1109/TNANO.2023.3306546 
  10. C. Palanisamy, S. Routray, and S. K. Palaniswamy, “Diversity Analysis of Defect Distribution and Carriers Quantization in Cu 2 ZnSnS 4/Cu2ZnSn(S,Se) 4 Kesterite Quantum Well Solar Cell,” ECS Journal of Solid State Science and Technology, vol. 12, no. 5, p. 055009, May 2023.(SCI-E)(IF: 2.07) doi: 10.1149/2162-8777/acd1b0. 
  11. P. Chandrasekar, S. Routray, S. K. Palaniswamy, T. R. Lenka and P. S. Menon, "Determinants Affecting the Performance of CZTSSe: Antisite Defects and Multiple Quantum Confinement for Photon-Sensitive Devices," in IEEE Sensors Journal, vol. 22, no. 16, pp. 15944-15952, 15 Aug.15, 2022.(SCI-E)(IF: 4.325) doi: 10.1109/JSEN.2022.3190226. 
  12. P. G. N. Kumar, P. Chandrasekar, S. Routray, M. Courel and Y. Massoud, "Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms," in IEEE Sensors Journal, vol. 22, no. 21, pp. 20381-20388, 1 Nov.1, 2022. (SCI-E)(IF: 4.325) doi: 10.1109/JSEN.2022.3205661. 
  13. Chandrasekar, P., Palaniswamy, S.K. and Routray, S Exploiting High-Density Earth-Abundant Kesterite Quantum Wells for Next-Generation PV Technology. IEEE Transactions on Electron Devices, 68(11), pp.5511-5517.(SCI-E)(IF: 3.221). doi: 10.1109/TED.2021.3090750 
  14. P. Chandrasekar and A. Dutta, “Recent Developments in Near Field Communication: A Study,” Wireless Personal Communications, vol. 116, no. 4, pp. 2913–2932, Sep. 2020. (SCI)(IF: 2.017). doi: https://doi.org/10.1007/s11277-020-07827-9

National/International Conferences

  1. A. Srivastava, R. Karn, A. Mondal, P. R, P. Chandrasekar and S. Rouray, "Advancing Solar Energy Efficiency: Exploring Quantum Well Integration in Kesterite-Based Thin Film Solar Cells," 2024 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI), Chennai, India, 2024, pp. 1-5, doi: 10.1109/RAEEUCCI61380.2024.10547878.
  2. J. Anthony, A. Nasser, K. Tripathi, P. R, P. Chandrasekar and S. Rouray, "Exploring CZTSSe Quantum Well Structures for Enhanced Thin Film Photovoltaics: Insights and Strategies for Performance Optimization Through Defect Distribution," 2024 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI), Chennai, India, 2024, pp. 1-5, doi: 10.1109/RAEEUCCI61380.2024.10547755.
  3. S. Aich, P. Chandrasekar, P. Rajalingam, and S. Routray, “Kesterite(CCTS) Solar Cell with Back Surface Field (BSF) Layers (CZTS/CZTSe): Empirical Observations into Electrical and Optical Parameters,” 2023 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI), Apr. 2023, doi: 10.1109/raeeucci57140.2023.10134085.
  4. Chandrasekar, P., P. Sandeep Kumar, and Soumyaranjan Routray. "Impact of Quantum Wells on the Open-Circuit Voltage of the Kesterite Solar Cells." In Micro and Nanoelectronics Devices, Circuits and Systems, pp. 381, Springer, Singapore, 2022
  5. C. Palanisamy and S. Rouray, "Carrier Quantization Effect and Defect Disparity in CZTS/CZTSSe Kesterite Solar Cell," 2022 IEEE Region 10 Symposium (TENSYMP), 2022, pp. 1-4, doi: 10.1109/TENSYMP54529.2022.9864433.
  6. P. Chandrasekar and T. Sangeetha, “Smart shopping cart with automatic billing system through RFID and ZigBee,” in Proc. Int. Conf. Inf. Commun. Embedded Syst. (ICICES), Chennai, India, Feb. 2014, pp. 1–4.

Professional Membership Body

Swipe to see more
Membership Number Membership Body Year Duration
93514989 IEEE 2025 1 Year
LM65016 ISTE 2009 Life Member